Combination DRAM and SRAM memory array

专利名称：Combination DRAM and SRAM memory

array

发明人：Scott, David B.,Tran, Hiep V.申请号：EP92121928.3申请日：19921223公开号：EP0548964A2公开日：19930630

专利附图：

摘要：A combination dynamic random access memory (DRAM) and static randomaccess memory (SRAM) (150) array, includes a plurality of DRAM sense amplifiers (82, 84),each coupled to at least one DRAM bitline (86), with a plurality of DRAM 5memory cells

selectively coupled to each of the bitlines (86). The sense amplifiers (82, 84) are

organized into groups, with each group of sense amplifiers (82, 84), selectively coupled torespective true and complement I/O lines (102, 104). For each pair of the true andcomplement I/O lines (102, 104), an SRAM latch (150) is coupled to the pair.

申请人：TEXAS INSTRUMENTS INCORPORATED

地址：13500 North Central Expressway Dallas Texas 75265 US

国籍：US

代理机构：Schwepfinger, Karl-Heinz, Dipl.-Ing.

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