AO4611Complementary Enhancement Mode Field Effect TransistorGeneral DescriptionThe AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4611 is Pb-free (meets ROHS & Sony 259 specifications). AO4611L is a Green Product ordering option. AO4611 and AO4611L are electrically identical.Featuresn-channel p-channelVDS (V) = 60V -60VID = 6.3A (VGS=10V) -4.9A (VGS = -10V)RDS(ON) RDS(ON) < 25mΩ (VGS=10V) < 42mΩ (VGS = -10V)< 30mΩ (VGS=4.5V) < 52mΩ (VGS = -4.5V)D2 S2G2S1G112348765D2D2D1D1D1 G2S2 G1 S1 SOIC-8n-channelp-channelAbsolute Maximum Ratings TA=25°C unless otherwise notedParameterMax n-channelSymbolVDSDrain-Source Voltage60Gate-Source VoltageContinuous Drain Current APulsed Drain Current BTA=25°CPower DissipationTA=70°CJunction and Storage Temperature RangeTA=25°CTA=70°CIDIDMPDTJ, TSTGVGS±206.354021.28-55 to 150Max p-channel-60±20-4.9-3.9-3021.28-55 to 150UnitsVVAW°CThermal Characteristics: n-channel and p-channelParameter
t ≤ 10sMaximum Junction-to-Ambient A
Steady-StateMaximum Junction-to-Ambient A
Steady-StateMaximum Junction-to-Lead C
t ≤ 10sMaximum Junction-to-Ambient A
Steady-StateMaximum Junction-to-Ambient A
Steady-StateMaximum Junction-to-Lead C
SymbolRθJARθJLRθJARθJL
Device
n-chn-chn-chp-chp-chp-ch
Typ487435487435
MaxUnits62.5°C/W110°C/W60°C/W62.511040
°C/W°C/W°C/W
Alpha & Omega Semiconductor, Ltd.
元器件交易网www.cecb2b.com
AO4611
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)Symbol
Parameter
ConditionsID=250µA, VGS=0V VDS=48V, VGS=0V
TJ=55°C
VDS=0V, VGS= ±20VVDS=VGS ID=250µAVGS=10V, VDS=5VVGS=10V, ID=6.3A
RDS(ON)gFSVSDIS
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.7A
Forward Transconductance
VDS=5V, ID=6.3A
IS=1A,VGS=0VDiode Forward Voltage
Maximum Body-Diode Continuous Current
TJ=125°C
140
203422270.74
13
1920
VGS=0V, VDS=30V, f=1MHzVGS=0V, VDS=0V, f=1MHz
1551160.6547.6
VGS=10V, VDS=30V, ID=6.3A
24.2614.47.6
VGS=10V, VDS=30V, RL=4.7Ω, RGEN=3Ω
IF=6.3A, dI/dt=100A/µs
2
Min60
TypMaxUnitsV
STATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)
Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain current
15100
2.1
3254230
µAnAVAmΩmΩSVApFpFpF
DYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssRg
Reverse Transfer CapacitanceGate resistance
2300
0.85830
ΩnCnCnCnCnsnsnsns
SWITCHING PARAMETERSQg(10V)Total Gate ChargeQg(4.5V)Total Gate ChargeQgsQgdtD(on)trtD(off)tftrrQrr
Gate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall Time
Body Diode Reverse Recovery Time
528.95.533.243
40
Body Diode Reverse Recovery ChargeIF=6.3A, dI/dt=100A/µs
nsnC
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev4: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
元器件交易网www.cecb2b.com
AO4611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 4010V4V304.5V)A( D20I3.5V10VGS=3V0012345VDS (Volts)Fig 1: On-Region Characteristics2422)VGS=4.5VΩm( )NO20(DSRVGS=10V181605101520ID (A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage50ID=6.3A40125°C)Ωm( )N30O(DSR25°C2010246810VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.
3025VDS=5V20125°CD151025°C501.522.533.54VGS(Volts)Figure 2: Transfer Characteristics2.22VGS=10VID=6.3A1.81.6VGS=4.5VID=5.7A1.41.210.80255075100125150175Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature1.0E+011.0E+001.0E-01125°CS1.0E-0225°C1.0E-031.0E-041.0E-050.00.20.40.60.81.0VSD (Volts)Figure 6: Body-Diode CharacteristicsI(A)Normalized On-ResistanceI (A)元器件交易网www.cecb2b.com
AO4611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 108VGS (Volts)642500001020304050Qg (nC)Figure 7: Gate-Charge Characteristics0051015202530VDS (Volts)Figure 8: Capacitance Characteristics3500VDS=30VID=6.3ACapacitance (pF)30002500200015001000CossCrssCiss100.0RDS(ON) limited10.0ID (Amps)40100µs1ms10ms1s0.1s10µsPower (W)TJ(Max)=150°CTA=25°C30201.0TJ(Max)=150°CTA=25°C0.10.1110sDC1010VDS (Volts)10000.0010.010.11101001000Figure 9: Maximum Forward Biased Safe Operating Area (Note E)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)10ZθJA Normalized Transient Thermal ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=62.5°C/WIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse10.1PDTonSingle PulseT1010010000.010.000010.00010.0010.010.11Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal ImpedanceAlpha & Omega Semiconductor, Ltd.
元器件交易网www.cecb2b.com
AO4611
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)Symbol
Parameter
ConditionsID=-250µA, VGS=0V VDS=-48V, VGS=0V
TJ=55°C
VDS=0V, VGS=±20VVDS=VGS ID=-250µAVGS=-10V, VDS=-5VVGS=-10V, ID=-4.9A
RDS(ON)gFSVSDIS
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4.4A
Forward Transconductance
VDS=-5V, ID=-4.9A
Diode Forward VoltageIS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
-1-30
34584217.8-0.73
-1-3
2417
VGS=0V, VDS=-30V, f=1MHzVGS=0V, VDS=0V, f=1MHz
1791201.945.2
VGS=-10V, VDS=-30V, ID=-4.9A
22.85.89.69.8
VGS=-10V, VDS=-30V, RL=6.2Ω, RGEN=3Ω
IF=-4.9A, dI/dt=100A/µs
6.14412.73242
422.355282900427252
-1.9
Min-60
-1-5±100-3
Typ
Max
UnitsVµAnAVAmΩmΩSVApFpFpFΩnCnCnCnCnsnsnsnsnsnC
STATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)
Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain current
DYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssRg
Reverse Transfer CapacitanceGate resistance
SWITCHING PARAMETERS
Qg(10V)Total Gate Charge (10V)Qg(4.5V)Total Gate Charge (4.5V)QgsQgdtD(on)trtD(off)tftrrQrr
Gate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery ChargeIF=-4.9A, dI/dt=100A/µs
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in anyven application depends on the user's specific board design. The current rating is based on the t value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev4: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev4: August 2005
Alpha & Omega Semiconductor, Ltd.
元器件交易网www.cecb2b.com
AO4611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL25-10V-4V-3.5V20-6V)15A( DI-10-3V5VGS=-2.5V0012345-VDS (Volts)Fig 1: On-Region Characteristics5045VGS=-4.5V)Ωm( )N40O(DSR35VGS=-10V3005101520-ID (A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage10090ID=-4.9A80125°C)Ω70m( )N60O(DSR504025°C30202345-V678910GS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.
3025VDS=-5V20D1510125°C525°C011.522.533.54-VGS(Volts)Figure 2: Transfer Characteristics21.8ID=-4.9AVGS=-10V1.61.4VGS=-4.5VI1.2D=-4.4A10.80255075100125150175Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature1.0E+011.0E+001.0E-011.0E-02125°CS1.0E-031.0E-041.0E-0525°C1.0E-060.00.20.40.60.81.0-VSD (Volts)Figure 6: Body-Diode CharacteristicsNormalized On-Resistance-I (A)-I(A)元器件交易网www.cecb2b.com
AO4611
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL108-VGS (Volts)642500001020304050-Qg (nC)Figure 7: Gate-Charge Characteristics00102030405060-VDS (Volts)Figure 8: Capacitance Characteristics3500VDS=-30VID=-4.9ACapacitance (pF)30002500200015001000CossCrssCiss100.0TJ(Max)=150°C, TA=25°CRDS(ON) limited0.1s1.01s10s0.10.11-VDS (Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note E)10100DC100µs1ms10ms10µsPower (W)40TJ(Max)=150°CTA=25°C30-ID (Amps)10.0201000.0010.010.11101001000Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)10ZθJA Normalized Transient Thermal ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=62.5°C/W1In descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulsePD0.1TonSingle Pulse0.010.00001T0.00010.1110Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance0.0010.011001000Alpha & Omega Semiconductor, Ltd.
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