专利名称：Repeatability of CVD film deposition during
sequential processing of substrates in adeposition chamber
发明人：Gaku Furuta,Tae Kyung Won,John M. White申请号：US10898472申请日：20040723公开号：US07879409B2公开日：20110201
专利附图：
摘要：We have a method of improving the deposition rate uniformity of the chemicalvapor deposition (CVD) of films when a number of substrates are processed in series,
sequentially in a deposition chamber. The method includes the plasma pre-heating of atleast one processing volume structure within the processing volume which surrounds thesubstrate when the substrate is present in the deposition chamber. We also have adevice-controlled method which adjusts the deposition time for a few substrates at thebeginning of the processing of a number of substrates in series, sequentially in adeposition chamber, so that the deposited film thickness remains essentially constantduring processing of the series of substrates. A combination of these methods into asingle method provides the best overall results in terms of controlling average filmthickness from substrate to substrate.
申请人：Gaku Furuta,Tae Kyung Won,John M. White
地址：Sunnyvale CA US,San Jose CA US,Hayward CA US
国籍：US,US,US
代理人：Shirley L. Church, Esq.
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