Variable Impedance Single Pole Double Throw CMOS S

专利名称：Variable Impedance Single Pole Double

Throw CMOS Switch

发明人：Pinping Sun,Kai D. Feng,Essam Mina申请号：US13082434申请日：20110408

公开号：US20120256678A1公开日：20121011

专利附图：

摘要：A single pole double throw (SPDT) semiconductor switch includes a seriesconnection of a first transmitter-side transistor and a first reception-side transistorbetween a transmitter node and a reception node. Each of the two first transistors is

provided with a gate-side variable impedance circuit, which provides a variable impedanceconnection between a complementary pair of gate control signals. Further, the body ofeach first transistor can be connected to a body bias control signal through a body-sidevariable impedance circuit. In addition, the transmitter node is connected to electricalground through a second transmitter-side transistor, and the reception node isconnected to electrical ground through a second reception-side transistor. Each of thesecond transistors can have a body bias that is tied to the body bias control signals forthe first transistors so that switched-off transistors provide enhanced electrical isolation.

申请人：Pinping Sun,Kai D. Feng,Essam Mina

地址：Essex Junction NY US,Hopewell Junction NY US,South Burlington VT US

国籍：US,US,US

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