Integrated circuit memory devices having selection

专利名称：Integrated circuit memory devices having

selection transistors with nonuniformthreshold voltage characteristics

发明人：Sunil Shim,Jaehun Jeong,Hansoo Kim,Sunghoi

Hur,Jaehoon Jang,Su-Youn Yi

申请号：US12698542申请日：20100202公开号：US08319275B2公开日：20121127

专利附图：

摘要：Provided is a semiconductor memory device. In the semiconductor memory

device, a lower selection gate controls a first channel region that is defined at asemiconductor substrate and a second channel region that is defined at the lowerportion of an active pattern disposed on the semiconductor substrate. The firstthreshold voltage of the first channel region is different from the second thresholdvoltage of the second channel region.

申请人：Sunil Shim,Jaehun Jeong,Hansoo Kim,Sunghoi Hur,Jaehoon Jang,Su-Youn Yi

地址：Gyeonggi-do KR,Gyeonggi-do KR,Gyeonggi-do KR,Gyeonggi-do KR,Gyeonggi-doKR,Gyeonggi-do KR

国籍：KR,KR,KR,KR,KR,KR

代理机构：Myers Bigel Sibley & Sajovec, P.A.

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