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STT818B

来源:东饰资讯网
®STT818B

HIGH GAIN LOW VOLTAGEPNP POWER TRANSISTOR

TypeSTT818Bs

Marking818Bss

s

VERY LOW COLLECTOR TO EMITTERSATURATION VOLTAGE

DC CURRENT GAIN > 100 (hFE)

3 A CONTINUOUS COLLECTOR CURRENT(IC)

SURFACE-MOUNTING SOT23-6L PACKAGEIN TAPE & REEL

SOT23-6L(TSOP6)APPLICATIONS sPOWER MANAGEMENT IN PORTABLEEQUIPMENTS

sSWITCHING REGULATOR IN BATTERYCHARGER APPLICATIONSDESCRIPTION The device is manufactured in low voltage PNPPlanar Technology by using a \"Base Island\"layout.

The resulting Transistor shows exceptional highgain performance coupled with very lowsaturation voltage.

INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

SymbolVCBOVCEOVEBOICICMIBIBMPtotTstgTj ParameterCollector-Base Voltage (IE = 0)Collector-Emitter Voltage (IB = 0)Emitter-Base Voltage (IC = 0)Collector CurrentCollector Peak CurrentBase CurrentBase Peak CurrentTotal Dissipation at TC = 25 CStorage TemperatureMax. Operating Junction TemperatureoValue-30-30-5-3-6-0.2-0.51.2-65 to 150150UnitVVVAAAAWooCCJuly 2002 1/5

STT818B

THERMAL DATA

Rthj-amb (1)Thermal Resistance Junction-ambient Max(1) Package mounted on FR4 pcb 25mm x 25mm.104.2oC/WELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

SymbolICBOIEBOParameterCollector Cut-offCurrent (IE = 0)Emitter Cut-off Current(IC = 0)Test ConditionsVCB = -30 VVCB = -30 V TC = 125 oCVEB = -5 VIC = -10 mA-30Min.Typ.Max.-0.1-20-0.1UnitµAµAµAVV(BR)CEO∗Collector-EmitterBreakdown Voltage(IB = 0)VCE(sat)∗Collector-EmitterSaturation VoltageBase-EmitterSaturation VoltageBase-Emitter VoltageDC Current GainIC = -0.5 A IB = -5 mAIC = -2 A IB = -20 mAIC = -1.2 A IB = -20 mAIC = -0.5 A IB = -5 mAIC = -1.2 A IB = -20 mAIC = -2 A IB = -20 mAIC = -0.5 A VCE = -2 VIC = -0.5 A VCE = -1 VIC = -2.5 A VCE = -3 V 100100-0.075-0.21-0.74-0.15-0.5-0.25-1.1-1.1-1.2-1.1VVVVVVVVBE(sat)∗VBE(ON)∗hFE∗-0.71* Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.Safe Operating AreaDerating Curve

2/5STT818B

DC Current Gain

DC Current Gain

Collector-Emitter Saturation VoltageBase-Emitter Saturation Voltage

Switching Times Resistive LoadSwitching Times Resistive Load

3/5STT818B

SOT23-6L MECHANICAL DATAmmMIN.AA1A2bCDEE1Lee10.900.000.900.250.092.802.601.500.350.951.90TYP.MAX.1.450.151.300.500.203.103.001.750.55MIN.0.0350.0000.0350.0100.0040.1100.1020.0590.0140.0370.075milsTYP.MAX.0.0570.0060.0510.0200.0080.1220.1180.0690.022DIM.AA2A1be1ecLEDE14/5STT818B

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2002 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.http://www.st.com5/5

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